Electronic beam and mask membrane null for x-ray lithography

摘要

PROBLEM TO BE SOLVED: To satisfy two characteristics, i.e., high crystallinity and appropriate stress of film, simultaneously by employing a multilayer structure where a stress correction film is formed on one or both sides of a diamond film formed through vapor phase synthesis. ;SOLUTION: A stress correction film 2 having an appropriate stress is formed on one side of a diamond film 1 to obtain a membrane 6 having multilayer structure. Tensile stress of the multilayer film 6 comprising the diamond film 1 and the stress correction film 2 is corrected to 0.0-5.0×10⁹dyn/cm². The stress correction film 2 may be formed on any or both surfaces of the diamond film 1. SiC, SiN or SiCN is employed as a material. The diamond film 1 and the stress correction film 2 have thickness t_dia, t_sic in the range of t_dia/t_sic≥1.0 and they are formed as thin as possible. According to the arrangement, mechanical strength and SOR light irradiation resistance substantially equivalent to those of diamond are ensured while having a visible light transmissive performance and an appropriate stress.;COPYRIGHT: (C)1998,JPO