首页> 外国专利> Electron density measurement and the plasma processing control system which utilize the change of resonance frequency of the release type resonator which accommodates the plasma

Electron density measurement and the plasma processing control system which utilize the change of resonance frequency of the release type resonator which accommodates the plasma

机译:利用容纳等离子体的释放型共振器的共振频率的变化的电子密度测量和等离子体处理控制系统

摘要

(57) Abstract Topic SolutionsTo measure plasma electron density (for example range of 1010 or 1012 cm -3), in the system in order to control the plasma generator, as for measurement of plasma electron density, it is used as portion of closed-loop control in plasma assist processing like accumulating or etching. Plasma measuring method and the system generate control voltage. This voltage controls the plasma generator. Program possible frequency source excites the plural resonance modes of the open type resonator which is located inside the plasma processor continually. As for resonance frequency of resonance mode, it responds to the plasma electron density inside the space between the reflectors of the open type resonator. The device decides the increase of resonance frequency of the resonance mode which is selected optionally with the introduction of the plasma, in the open type resonator automatically, this compares with the frequency which is decided and the data which is input beforehand.
机译:(57)<摘要> <主题>解决方案为了控制等离子体发生器,在系统中测量等离子体电子密度(例如1010或1012 cm -3 的范围)电子密度,它用作等离子辅助处理(例如累积或蚀刻)中闭环控制的一部分。等离子体测量方法和系统产生控制电压。该电压控制等离子体发生器。编程可能的频率源连续激发位于等离子体处理器内部的开放式谐振器的多种谐振模式。至于共振模式的共振频率,它响应于开放式共振器的反射器之间的空间内的等离子体电子密度。装置决定随着等离子体的引入而可选地选择的谐振模式的谐振频率的增加,在开放式谐振器中自动地,这与所确定的频率和预先输入的数据进行比较。

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