SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD, SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, SEMICONDUCTOR STRUCTURE AND ITS MANUFACTURING METHOD, ELECTRONIC DEVICE AND ITS MANUFACTURING METHOD AND STRUCTURE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To upgrade an end face of a resonator formed by cleavage or the flatness of the end face even when the cleavage of a substrate is poor.;SOLUTION: When a semiconductor laser using a III-V nitride compound semiconductor is manufactured, III-V nitride compound semiconductor layers 2, 3 are grown on different types of substrates such as, for example, a sapphire substrate 1, and then a part near the forming position of the end face of the resonator of the layers 2, 3 is separated from the substrate 1 by irradiating the substrate with an ultraviolet laser beam. Then, the layers 2, 3 are cleaved together with the substrate 1 to thereby form the end face of the resonator.;COPYRIGHT: (C)2004,JPO