DEVICE AND ELECTRODE STRUCTURE FOR DEVELOPING ELECTROSTATIC LATENT IMAGE USING ION IMPLANTATION FOR TRIBOELECTROSTATIC CHARGE CHARACTERISTIC OF MATERIAL OR HYBRID SCANVENGELESS DEVELOPING WIRE AND ELECTRODE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To prevent the generation of a charge potential between an electrode wire and a developing material as far as possible when both are brought into frictional contact with each other by treating a developing electrode for a scavengeless or hybrid scavengeless developing system by using an ion implantation process.;SOLUTION: The wire treatment using the ion implantation process for reducing the generation of the charge potential is performed without lowering the hardness of the wire material. The durability to the wire hardness and the wire contamination is improved by adopting the ion implantation process in manufacturing the wire. A bare wire to be used for the electrode is first plated with a gold/platinum alloy. The ions are implanted to a substrate without changing the surface finishing of the wire electrode, by which the triboelectrostatic charge characteristic or electro-negativity of the wire is changed. As a result of the ion implantation, the electro-negativity of the electrode can be regulated to meet the electrode-negativity of a toner material used in the developing system or can be made coincident therewith.;COPYRIGHT: (C)2003,JPO