首页> 外国专利> SEMICONDUCTOR OPTICAL MODULATOR, MACH-ZEHNDER TYPE OPTICAL MODULATOR USING THE SAME AND METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL MODULATOR

SEMICONDUCTOR OPTICAL MODULATOR, MACH-ZEHNDER TYPE OPTICAL MODULATOR USING THE SAME AND METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL MODULATOR

机译:半导体光学调制器,使用其的MACH-ZEHNDER型光学调制器和制造半导体光学调制器的方法

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor optical modulator in which the reflection of a high frequency electric signal from an element is suppressed and a driving voltage is minimized a Mach-Zehnder type optical modulator using the semiconductor optical modulator, and a method of manufacturing the semiconductor optical modulator.;SOLUTION: An optical waveguide core layer 3 is so formed on a conductive substrate 2 on which micro optical modulators 10A and gap regions 10B are alternately formed that the optical waveguide core layer 3 is alternately intersected with the micro optical modulators 10A and the gap regions 10B by forming an insulating material 6 at every prescribed interval. Further, a metallic electrode (signal) 8b is connected to the optical waveguide core layer 3 in the micro optical modulator 10A via a conductive semiconductor 5, and a metallic electrode (ground) 9 is connected via the conductive substrate 2. Further, the metallic electrode (signal) 8b in respective micro optical modulators 10A are connected with metallic wires 8a. The regions between the optical waveguide core layer 3 and the signal and ground metallic electrodes (8b, 9) are formed with a conductive semiconductor material. Whereas the optical waveguide core layer 3 is interposed by an insulating semiconductor material in the gap region.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供一种半导体光调制器及其制造方法,在该半导体光调制器中,来自元件的高频电信号的反射被抑制并且驱动电压被最小化。Mach-Zehnder型光调制器解决方案:在导电衬底2上形成光波导芯层3,在其上交替形成微光调制器10A和间隙区域10B,使得光波导芯层3与微光调制器交替相交。通过以每个预定间隔形成绝缘材料6来形成图10A和10B所示的间隙区域10B。此外,金属电极(信号)8b经由导电半导体5连接至微光学调制器10A中的光波导芯层3,并且金属电极(接地)9经由导电基板2连接。各个微光学调制器10A中的电极(信号)8b与金属线8a连接。光波导芯层3与信号金属电极和接地金属电极(8b,9)之间的区域由导电半导体材料形成。而光波导芯层3在间隙区域中由绝缘半导体材料插入。版权所有:(C)2003,JPO

著录项

  • 公开/公告号JP2003177369A

    专利类型

  • 公开/公告日2003-06-27

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP20010377792

  • 发明设计人 SODA HARUHISA;AKIYAMA TAKASHI;

    申请日2001-12-11

  • 分类号G02F1/025;H01S5/026;

  • 国家 JP

  • 入库时间 2022-08-22 00:17:20

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