PHOTO-OXIDATION METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, PHOTO-OXIDATION APPARATUS AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a photo-oxidation method for effectively forming an insulation film by suppressing generation of interface level and fixed charges or the like under lower temperatures, and also provide a method of manufacturing a semiconductor device using the same and a photo-oxidation apparatus.;SOLUTION: A substrate 6, on which the Si film is formed, is set into a vacuum chamber 2, it is then heated with a lamp heater 7 under evacuation conditions. Moreover, the substrate 6 is then exposed to a gas, having the oxidation property containing oxygen and rare gas and is irradiated with ultraviolet radiation 5 emitted by a lamp 1.;COPYRIGHT: (C)2003,JPO