COATING LIQUID FOR FORMING SILICA-BASED FILM FOR SEMICONDUCTOR, SILICA-BASED COATED FILM FOR SEMICONDUCTOR, AND SEMICONDUCTOR DEVICE USING THE COATED FILM

摘要

PROBLEM TO BE SOLVED: To prepare a film with a low dielectric constant of 2.0-3.0 and which can resist to a CMP process of an LSI.;SOLUTION: The coating liquid for forming the silica-based film is obtained by polycondensing a silicone compound represented by the formula (I): R¹_nSiX_4-n (I) (wherein, R¹ is hydrogen atom or a 1-12C organic group; X is a hydrolyzable group; and (n) is an integer of 0-2) and a siloxane compound represented by the formula (II): R²₃SiO(SiR²₂O)_mSiR²₃ (II) (wherein, R² is hydrogen atom or a 1-8C organic group, with the proviso that at least one substituent is an organic group having an unsaturated group; and (m) is an integer of 0 or 1) by cohydrolysis in the presence of an organic polymer volatilizing by being thermally decomposed within the temperature range of 100-500°C.;COPYRIGHT: (C)2003,JPO