GaN-BASED SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR LIGHT-EMITTING DIODE

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor, and a method for manufacturing the same, equipped with a novel structure effectively usable for improvement on the luminescence property of semiconductor light emitting diodes using a GaN-based semiconductor.;SOLUTION: Use of crystal surfaces yet nonplanar in a GaN-based semiconductor film selective growth process for the irregular reflection of light improves light ejection efficiency. Non-flat boundaries are formed in between a 1st GaN- based semiconductor 13 and a 2nd GaN-based semiconductor 12, and in between the 2nd GaN-based semiconductor 12 and a 3rd GaN-based semiconductor 11.;COPYRIGHT: (C)2003,JPO