DATA STORAGE DEVICE, AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE TO BE USED THEREFOR

摘要

PROBLEM TO BE SOLVED: To arbitrarily set a data unit exchanged between a nonvolatile memory and this device for data capacity of a cache memory for improving a hit rate. SOLUTION: The data storage device has a nonvolatile memory device (cache memory 1) and a nonvolatile semiconductor memory device (MONOS memory 2), data is stored linking with both memories in accordance with inputted data. The MONOS memory 2 has a memory cell array in which a plurality of memory cells storing data by accumulating electric charges in an electric charge trap in a plurality of ferroelectric films laminated on the semiconductor are arranged in a matrix state and memory cells are connected by a plurality of common lines of a row direction and a column direction. In this device, common lines of this column direction are separated for each cell column so that the number of bits of data unit exchanged between memory devices can be set arbitrarily.