DEVICE INCLUDING EPITAXIAL NICKEL SILICIDE FILM ON Si OF (100) FACE OR STABLE NICKEL SILICIDE FILM ON AMORPHOUS Si AND METHOD OF MANUFACTURING IT

摘要

PROBLEM TO BE SOLVED: To provide a single crystal NiSi₂ film on a silicon layer of a (100) face without forming a silicide facet along a (111) face in an Si substrate.;SOLUTION: A cobalt intermediate layer 18 is formed on a silicon substrate 16 of a (100) face, nickel atoms are diffused through the cobalt intermediate layer 18, and the nickel atoms are uniformly made to grow on the silicon substrate 16 of the (100) face. That is, the nickel atoms are diffused through a cobalt/nickel/silicon alloy film formed by the reaction between the cobalt intermediate layer, nickel, and silicon and reach a silicon boundary uniformly. In other words, the nickel atoms are diffused in a direction 22 vertical to the surface 24 of the silicon substrate 16. With such a constitution, a single crystal nickel silicide film 20 is made to grow uniformly.;COPYRIGHT: (C)2003,JPO