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DOUBLE-ELECTRODE WAFER HOLDER OF PLASMA-ASSISTED WAFER PROCESSING APPARATUS

机译:等离子体辅助晶片加工装置的双电极晶片夹持器

摘要

PROBLEM TO BE SOLVED: To improve the radial profile of plasma density on the surface of a wafer.;SOLUTION: A double-electrode wafer holder comprise a central electrode 2 to which an rf current is supplied from an rf power supply 8, a thin dielectric ring member 3 disposed around a sidewall of the central electrode, an outside electrode 4 disposed around the thin dielectric ring member, a dielectric plate 5, in which the outside electrode obtains part of the rf current provided to the central electrode by a capacitive coupling mechanism through the thin dielectric ring member, and which covers the upper surface of the outside electrode, and dielectric members 6a, 6b which cover a side surface and the lower surface of the outside electrode, and the lower surface of the central electrode.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:为了改善晶片表面上的等离子体密度的径向分布;解决方案:双电极晶片支架包括中央电极2,该中央电极2从rf电源8提供rf电流,薄围绕中心电极的侧壁设置的电介质环部件3,围绕薄电介质环部件的外部电极4,电介质板5,其中,外部电极通过电容耦合获得提供给中心电极的rf电流的一部分通过薄的介电环构件覆盖外电极的上表面,并通过介电构件6a,6b覆盖外电极的侧面和下表面以及中心电极的下表面,形成一个机构。 :(C)2003,日本特许厅

著录项

  • 公开/公告号JP2003133398A

    专利类型

  • 公开/公告日2003-05-09

    原文格式PDF

  • 申请/专利权人 ANELVA CORP;

    申请/专利号JP20010331119

  • 发明设计人 SNIL WIKURAMANAYAKA;TSUKADA TSUTOMU;

    申请日2001-10-29

  • 分类号H01L21/68;B01J19/08;H01L21/3065;H05H1/46;

  • 国家 JP

  • 入库时间 2022-08-22 00:12:51

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