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Method for controlling chamber inner wall surface of an inductively coupled plasma etching apparatus
Method for controlling chamber inner wall surface of an inductively coupled plasma etching apparatus
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机译:控制感应耦合等离子体蚀刻装置的腔室内壁表面的方法
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摘要
An inductively coupled plasma etching apparatus includes a chamber for generating a plasma therein. The chamber is defined by walls of a housing. A coil for receiving high frequency (RF) power is disposed adjacent to and outside of one of the walls of the housing. A metal plate is disposed adjacent to and outside of the wall of the housing that the coil is disposed adjacent to. The metal plate is positioned in a spaced apart relationship between the coil and the wall of the housing and has radial slits formed therein that extend transversely to the coil. A connector electrically connects the metal plate to the coil. A method for controlling an inner surface of a wall defining a chamber in which a plasma is generated is also described.
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