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Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer

机译：使用透射光谱法的晶片带边缘测量方法和控制晶片的温度均匀性的方法

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摘要

A method and system for using transmission spectroscopy to measure a temperature of a substrate (135). By passing light through a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the wafer. This in-situ method and system can be used as a feedback control in combination with a variable temperature substrate holder (182) to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites the variation of the temperature across the substrate (135) can also be measured.

机译：一种使用透射光谱法测量衬底（ 135 ）温度的方法和系统。通过使光穿过衬底，可以使用晶片的带边缘特性来确定衬底的温度。此原位方法和系统可以与可变温度的基板支架（ 182 ）结合用作反馈控制，以更精确地控制基板的处理条件。通过利用多个测量位置，还可以测量整个基板（ 135 ）上的温度变化。 展开▼

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公开/公告号US2002189757A1

专利类型

公开/公告日2002-12-19

原文格式PDF

申请/专利权人 DENTON MEDONA B.;JOHNSON WAYNE L.;SIRKIS MURRAY D.;
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申请/专利号US20020168544

发明设计人 MEDONA B. DENTON;WAYNE L. JOHNSON;MURRAY D. SIRKIS;
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申请日2002-07-02

分类号C23C16/00;C23F1/00;

国家 US

入库时间 2022-08-22 00:11:08

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3. Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer [P] . 美国专利： US6891124B2 . 2005-05-10

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4. A method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer [P] . AU3084101A . 2001-07-16

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