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On-chip ESD protection circuit with a substrate-triggered SCR device
On-chip ESD protection circuit with a substrate-triggered SCR device
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机译:带衬底触发SCR器件的片上ESD保护电路
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摘要
An ESD (electrostatic discharge) protection circuit is electrically connected to an I/O buffering pad, an internal circuit (IC), a VSS power terminal and a VDD power terminal. The ESD protection circuit comprises a first ESD-detection circuit electrically connected between the I/O pad and the VSS power terminal, a second ESD-detection circuit electrically connected between the I/O pad and the VDD power terminal, a P-STSCR comprising a first lateral SCR and a P trigger node, and an N-STSCR comprising a second lateral SCR and an N trigger node. When a positive-to-VSS ESD event occurs on the I/O buffering pad, the first ESD-detection circuit generates a first trigger current to the P-trigger node of the P-STSCR to trigger the first lateral SCR. The P-STSCR is thus quickly turned on, and current incurred from the positive voltage pulse is discharged to the VSS power terminal. When a negative-to-VDD ESD event occurs on the I/O buffering pad, the second ESD-detection circuit generates a second trigger current to the N-trigger node of the N-STSCR to trigger the second lateral SCR. The N-STSCR is quickly turned on, and current incurred from the negative voltage pulse is discharged to the VDD power terminal. In contrast to the prior method of making an on-chip ESD protection circuit, the present invention uses a substrate-triggered SCR device with a much lower switching voltage in the protection circuit, and applies the protection circuit to input ESD protection circuits, output ESD protection circuits, and power-rail ESD clamp circuits. ESD robustness of the IC product in the deep submicron CMOS processes is improved, and the total layout area of the on-chip ESD protection circuit is reduced.
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机译:ESD(静电放电)保护电路与I / O缓冲垫,内部电路(IC),V SS Sub>电源端子和V DD Sub>电源电连接。终奌站。 ESD保护电路包括电连接在I / O焊盘与V SS Sub>电源端子之间的第一ESD检测电路,电连接在I / O焊盘与V之间的第二ESD检测电路。 DD Sub>电源端子,包括第一横向SCR和P触发节点的P-STSCR,以及包括第二横向SCR和N触发节点的N-STSCR。当在I / O缓冲板上发生对V SS Sub>的正向ESD事件时,第一ESD检测电路会生成一个第一触发电流到P-STSCR的P触发节点以进行触发第一个横向SCR。因此,P-STSCR迅速打开,并且正电压脉冲产生的电流被释放到V SS Sub>电源端子。当在I / O缓冲板上发生负到V DD Sub> ESD事件时,第二个ESD检测电路会生成一个第二触发电流到N-STSCR的N触发节点以触发第二个横向SCR。 N-STSCR迅速打开,并且负电压脉冲产生的电流被释放到V DD Sub>电源端子。与现有的制作片上ESD保护电路的方法相反,本发明使用衬底触发的SCR器件,该SCR器件在保护电路中具有低得多的开关电压,并将该保护电路应用于输入ESD保护电路,输出ESD保护电路和电源轨ESD钳位电路。改进了深亚微米CMOS工艺中IC产品的ESD鲁棒性,并减小了片上ESD保护电路的总布局面积。
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