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Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
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机译:用于HDP-CVD的氢辅助非掺杂氧化硅沉积工艺
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摘要
A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller operatively coupled to the gas distribution system and the high density plasma power source and a memory coupled to the controller. The memory includes computer instructions embodied in a computer-readable format. The computer instructions comprise (i) instructions that control the gas distribution system to flow a process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen-containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus and (ii) instructions that control the high density plasma source to form a plasma having an ion density of at least 1×1011 ions/cm3 from the process gas to deposit the silicon oxide layer over the substrate.
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机译:基板处理设备,包括基板处理室,可操作地耦合到该室的气体分配系统,高密度等离子体电源,可操作地耦合到气体分配系统和高密度等离子体电源的控制器以及与该控制器耦合的存储器。存储器包括以计算机可读格式体现的计算机指令。该计算机指令包括(i)指令,这些指令控制气体分配系统使工艺气体流动,该工艺气体包括硅烷气体,含氧源,惰性气体和含氢源,它们是分子氢或氢化物气体,不包括硅,硼或磷,以及(ii)控制高密度等离子体源以形成离子密度至少为1×10 11 Sup> ions / cm 3 sup>的等离子体的指令从处理气体供应以在衬底上沉积氧化硅层。
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