Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD

摘要

A method of forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The silicon oxide layer is formed by flowing a process gas including a silicon-containing source, an oxygen-containing source, an inert gas and a hydrogen-containing source into the substrate processing chamber and forming a high density plasma (i.e., a plasma having an ion density of at least 1×10¹¹ ions/cm³) from the process gas to deposit said silicon oxide layer over said substrate. In one embodiment, the hydrogen-containing source in the process gas is selected from the group of H₂, H₂O, NH₃, CH₄ and C₂H₆.