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Method frame storage using multiple memory circuits

机译:使用多个存储电路的方法帧存储

摘要

A memory architecture in accordance with an embodiment of the present invention improves the speed of method invocation. Specifically, method frames of method calls are stored in two different memory circuits. The first memory circuit stores the execution environment of each method call, and the second memory circuit stores parameters, variables or operands of the method calls. In one embodiment the execution environment includes a return program counter, a return frame, a return constant pool, a current method vector, and a current monitor address. In some embodiments, the memory circuits are stacks; therefore, the stack management unit to cache can be used to cache either or both memory circuits. The stack management unit can include a stack cache to accelerate data transfers between a stack-based computing system and the stacks. In one embodiment, the stack management unit includes a stack cache, a dribble manager unit, and a stack control unit. The dribble manager unit includes a fill control unit and a spill control unit. Since the vast majority of memory accesses to the stack occur at or near the top of the stack, the dribble manager unit maintains the top portion of the stack in the stack cache. When the stack-based computing system is popping data off of the stack and a fill condition occurs, the fill control unit transfer data from the stack to the bottom of the stack cache to maintain the top portion of the stack in the stack cache. Typically, a fill condition occurs as the stack cache becomes empty and a spill condition occurs as the stack cache becomes full.
机译:根据本发明的实施例的存储器架构提高了方法调用的速度。具体而言,方法调用的方法帧存储在两个不同的存储电路中。第一存储器电路存储每个方法调用的执行环境,第二存储器电路存储方法调用的参数,变量或操作数。在一个实施例中,执行环境包括返回程序计数器,返回帧,返回常量池,当前方法向量和当前监视器地址。在一些实施例中,存储电路是堆叠;例如,堆叠。因此,要缓存的堆栈管理单元可用于缓存一个或两个存储器电路。堆栈管理单元可以包括堆栈缓存,以加速基于堆栈的计算系统与堆栈之间的数据传输。在一个实施例中,堆栈管理单元包括堆栈高速缓存,运球管理器单元和堆栈控制单元。运球管理器单元包括填充控制单元和溢出控制单元。由于对堆栈的绝大多数存储器访问发生在堆栈顶部或顶部附近,因此运球管理器单元将堆栈顶部保留在堆栈高速缓存中。当基于堆栈的计算系统将数据弹出堆栈并发生填充情况时,填充控制单元会将数据从堆栈传输到堆栈高速缓存的底部,以将堆栈的顶部保留在堆栈高速缓存中。通常,填充条件在堆栈高速缓存变空时发生,溢出情况在堆栈高速缓存变满时发生。

著录项

  • 公开/公告号US2003200351A1

    专利类型

  • 公开/公告日2003-10-23

    原文格式PDF

  • 申请/专利权人 SUN MICROSYSTEMS INC.;

    申请/专利号US20030442410

  • 发明设计人 JAMES MICHAEL OCONNOR;MARC TREMBLAY;

    申请日2003-05-20

  • 分类号G06F9/44;

  • 国家 US

  • 入库时间 2022-08-22 00:09:40

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