Arrangement for back-biasing multiple integrated circuit substrates at maximum supply voltage among all circuits

摘要

A diode coupling-based arrangement back-biases each of the semiconductor substrates of a plurality of integrated circuits at the maximum (e.g., most negative) DC voltage applied to any individual circuit, irrespective of a potential variation in applied DC voltages. Each semiconductor chip/substrate includes an auxiliary terminal to which each DC voltage terminal for that chip is diode-coupled. The auxiliary voltage terminal is connected to the underside biasing and thermal dissipation pad of the substrate. When multiple packages are mounted and conductively joined to a shared metallic dissipation region of a support substrate, all auxiliary voltage terminals will be connected in common, so as to back-bias each semiconductor substrate to the most maximum (e.g., most negative) of all applied DC voltages.