Method of manufacturing group III nitride compound semiconductor light emitting device having a light emission output of high light intensity

摘要

A cap layer of GaN about 140 Å thick and a p-type clad layer of Mg-doped p-type Al_xGa_1-xN (x=0.12) about 200 Å thick are formed successively on an MQW active layer about 230 Å thick. A p-type contact layer of Mg-doped p-type Al_yGa_1-yN (y=0.05) about 600 Å thick is further formed thereon. These composition ratios x and y are selected to satisfy the expression “0.03≦0.3x≦y≦0.5x≦0.08”, so that the composition of the p-type contact layer becomes close to the composition of the p-type clad layer.