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Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics
Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics
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机译:改善沉积在低介电常数电介质上的CVD和ALD膜的成核和粘附的方法
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摘要
A method to improve nucleation and/or adhesion of a CVD or ALD-deposited film/layer onto a low-dielectric constant (low-k) dielectric layer, such as a polymeric dielectric or a carbon-doped oxide. In an embodiment, the method includes providing a substrate into a deposition chamber. A dielectric layer having a reactive component is formed over the substrate. The formed dielectric layer having the reactive component is then processed to produce polar groups or polar sites at least on a surface of the formed dielectric layer. ;The present invention forms a low-k organic polymer dielectric layer or an organic-doped oxide dielectric layer having improved nucleation and/or adhesion properties for a subsequently deposited layer such as a barrier material layer.
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