Adhesion and Nucleation Property of CVD-Cu with ALD-Co(W) Film as Cu diffusion Barrier and Adhesion Promoting Layer in Future ULSI Interconnects - (PPT)

摘要

1) Using Cu(hfac)(tmvs) and Ru, we can form ultra thin and continuous CVD-Cu film with good adhesion strength. 2) Co(W) shows good adhesion strength with CVD-Cu as Ru when Cu was deposited by 0 and F free precursor. 3) To utilize Co (W) as barrier layer, [Cu(~sBu-Me-amd)]_2 will be required. But, its nucleation property has to be enhanced. (ex. by some catalytic agent such as CVD-Mn).