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Method for modifying a chip layout to minimize within-die CD variations caused by flare variations in EUV lithography
Method for modifying a chip layout to minimize within-die CD variations caused by flare variations in EUV lithography
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机译:修改芯片布局以最小化由EUV光刻中的光斑变化引起的晶粒内CD变化的方法
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摘要
A method including determining a first flare convolution based on a feature density of projected structures on a substrate layout, determining a second flare convolution based on a mask for a given substrate layout, determining a system flare variation by summing the first flare convolution and the second flare convolution, and determining a critical dimension variation based on the system flare variation.
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