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Method of measuring and calibrating inclination of electron beam in electron beam proximity exposure apparatus, and electron beam proximity exposure apparatus

机译:电子束接近曝光装置中的电子束倾斜度的测定和校准方法以及电子束接近曝光装置

摘要

A calibration mask having a plurality of marks previously formed thereon is loaded, and a deflector is used to control deflection of electron beams so that the electron beams are incident on a mark of the calibration mask. The electron beams, having passed through the mark, impinge on a first Faraday cup having a first mark and on a second Faraday cup having a second mark. Then, positional coordinates on an XY stage are detected when electrical quantities detected by the Faraday cups are largest. The positional coordinates on the above mentioned XY stage are detected for each of the marks of the calibration mask. Then, according to the positional coordinates on the XY stage detected in this manner and a difference in height between the marks, the inclination of the electron beams is calculated for the position input to each mark of the calibration mask. Thus, the inclination of electron beams can be accurately measured.
机译:加载具有预先形成在其上的多个标记的校准掩模,并且偏转器用于控制电子束的偏转,使得电子束入射在校准掩模的标记上。穿过标记的电子束撞击具有第一标记的第一法拉第杯和具有第二标记的第二法拉第杯。然后,当由法拉第杯检测到的电量最大时,将检测XY工作台上的位置坐标。对于校准掩模的每个标记,检测上述XY平台上的位置坐标。然后,根据以这种方式检测到的XY平台上的位置坐标和标记之间的高度差,针对输入到校准掩模的每个标记的位置计算电子束的倾斜度。因此,可以精确地测量电子束的倾斜度。

著录项

  • 公开/公告号US6624430B2

    专利类型

  • 公开/公告日2003-09-23

    原文格式PDF

  • 申请/专利权人 LEEPL CORPORATION;

    申请/专利号US20020152343

  • 发明设计人 AKIRA HIGUCHI;

    申请日2002-05-22

  • 分类号G21K51/00;H01J370/80;

  • 国家 US

  • 入库时间 2022-08-22 00:06:17

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