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Scanning exposure photo-mask and method of scanning exposure and scanning exposure system

机译:扫描曝光光罩及其扫描方法和扫描曝光系统

摘要

A scanning exposure system to expose an objective wafer has a light source; a slit-shaped window having a length in a first direction greater than a width in a second direction perpendicular to the first direction; a photomask having an exposure opening therein, the exposure opening having a length along a longer direction greater than a width along a narrower direction perpendicular to the longer direction, the longer direction being aligned parallel to a projection of the first direction on the photomask, the objective wafer being exposed to the light source through the slit-shaped window and the exposure opening during a scanning operation by a relative motion of the photomask with respect to the slit-shaped window in a second direction perpendicular to the first direction.
机译:用于曝光目标晶片的扫描曝光系统具有光源。狭缝形窗口,其在第一方向上的长度大于在垂直于所述第一方向的第二方向上的宽度;一种在其中具有曝光开口的光掩模,所述曝光开口的沿较长方向的长度大于沿垂直于所述较长方向的较窄方向的宽度,所述较长方向平行于所述第一方向在所述光掩模上的投影,并且在扫描操作期间,由于光掩模在垂直于第一方向的第二方向上相对于狭缝形窗口的相对运动,所以目标晶片通过狭缝形窗口和曝光开口暴露于光源。

著录项

  • 公开/公告号US6522389B2

    专利类型

  • 公开/公告日2003-02-18

    原文格式PDF

  • 申请/专利权人 NEC CORPORATION;

    申请/专利号US20010794910

  • 发明设计人 MASASHI FUJIMOTO;

    申请日2001-02-28

  • 分类号G03B274/20;G03B275/20;G03B275/40;G03B273/20;

  • 国家 US

  • 入库时间 2022-08-22 00:05:56

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