Self-aligned silicon germanium heterojunction bipolar transistor device with electrostatic discharge crevice cover for salicide displacement

摘要

A method and structure for a bipolar transistor with a semiconductor substrate having a surface and a shallow trench isolation (STI) in the surface. The STI has an edge, a crevice region in the STI adjacent the STI edge, a base region above the STI, a silicide above the base region, an emitter structure on the surface adjacent the base region, and a crevice cover between the emitter structure and the silicide. The crevice cover maintains spacing between the emitter structure and the silicide.