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Methods of forming field emission tips using deposited particles as an etch mask

机译:使用沉积的颗粒作为蚀刻掩模形成场发射尖端的方法

摘要

In one aspect, the invention includes a method of forming field emission emitter tips, comprising: a) providing a masking material over a semiconductor substrate to form a masking-material-covered substrate; b) submerging at least a portion of the masking-material-covered semiconductor substrate in a liquid; c) providing particulates suspended on an upper surface of the liquid; d) while the particulates are suspended, moving the submerged masking-material-covered substrate relative to the suspended particulates to form tightly packed monolayer of the particulates supported on the masking material of the masking-material-covered substrate; e) decreasing a dimension of the particulates to leave some portions of the masking material covered by the particulates and other portions of the masking material uncovered by the particulates; f) after decreasing the dimension and while the particulates are supported on the upper surface, exposing the masking-material-covered substrate to first etching conditions which remove uncovered portions of the masking material while leaving covered portions of the masking material over the substrate to define a patterned masking layer; g) removing the particulates; and h) while the patterned masking layer is over the semiconductor substrate, exposing the semiconductor substrate to a second etching conditions to pattern the semiconductor substrate into emitter tips.
机译:在一个方面,本发明包括一种形成场发射发射器尖端的方法,包括:a)在半导体衬底上提供掩模材料以形成覆盖有掩模材料的衬底; b)将至少一部分覆盖有掩膜材料的半导体衬底浸入液体中; c)提供悬浮在液体上表面上的颗粒; d)在悬浮颗粒的同时,使浸没掩蔽材料的衬底相对于悬浮的颗粒运动,以形成紧密堆积的支撑在掩蔽材料的衬底的掩蔽材料上的颗粒单层; e)减小微粒的尺寸,以使掩蔽材料的某些部分被微粒覆盖,而掩蔽材料的其他部分未被微粒覆盖; f)在减小尺寸之后并且当颗粒被支撑在上表面上时,将覆盖有掩蔽材料的基板暴露于第一蚀刻条件,该第一蚀刻条件去除了未覆盖的掩蔽材料部分,同时在基板上保留了掩蔽材料的被覆盖部分以限定图案化掩膜层; g)去除颗粒; h)在构图的掩模层在半导体衬底上的同时,使半导体衬底暴露于第二蚀刻条件以将半导体衬底构图为发射极尖端。

著录项

  • 公开/公告号US6524874B1

    专利类型

  • 公开/公告日2003-02-25

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US19980129978

  • 发明设计人 JIM ALWAN;

    申请日1998-08-05

  • 分类号H01J90/00;H01L210/00;

  • 国家 US

  • 入库时间 2022-08-22 00:05:33

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