Method for manufacturing a gate structure incorporating therein aluminum oxide as a gate dielectric

摘要

A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. An aluminum oxide (Al₂O₃) layer is deposited on top of the semiconductor substrate and then, silicon ions plasma doping is carried out. Thereafter, the Al₂O₃ layer doped with silicon ions is annealed in the presence of oxygen gas or nitrous oxygen to remove a metallic vacancy in the Al₂O₃ layer. Subsequently, a conductive layer is formed on top of the Al₂O₃ layer. Finally, the conductive layer is patterned into the gate structure.