Low-voltage-Vt (CMOS) transistor design using a single mask and without any additional implants by way of tailoring the effective channel length (Leff)

摘要

Low threshold voltage transistors are fabricated by removing oxide spacers from the poly gate sidewalls of the transistors that are to be low threshold voltage. This causes the effective channel length of the low Vt transistors to be shorter than that of the core transistors, which causes lower threshold voltage.