Method for predicting lifetime of insulating film and method for reliability testing of semiconductor device

摘要

A total injected electron quantity Q_BD, which has reached a constant value against a variation in stress voltage applied to an insulating film for use in a semiconductor device, is obtained as a critical injected electron quantity Q_BDcrit. The total injected electron quantity Q_BD is a total quantity of electrons injected into the insulating film before the film causes a dielectric breakdown. Thereafter, a time it should take for a total quantity of electrons, injected into the insulating film under actual operating conditions of the device, to reach the critical injected electron quantity Q_BDcrit is estimated as the expected lifetime of the insulating film.