Semiconductor device with capacitor using high dielectric constant film or ferroelectric film

摘要

A semiconductor device including a semiconductor substrate having a main surface, an insulating layer formed on the main surface of the semiconductor substrate, and lower electrode film embedded in the insulating layer. A dielectric film embedded in the insulating layer covers the lower electrode film. An upper electrode film is embedded in the insulating layer and is opposed to the lower electrode film through the dielectric film. A conductor plug electrically connects the lower electrode film and the semiconductor substrate with each other through a lower contact hole selectively formed in the insulating layer. A conductor layer is embedded in the insulating layer and is electrically connected to the upper electrode film on a first portion defining a part of the upper surface of the conductor layer. A wire arranged on the insulating layer is connected to a second portion defining another part, different from the first portion, of the upper surface of the conductor layer through an upper contact hole selectively formed in the insulating layer.