Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure

摘要

There are provided a semiconductor substrate and a semiconductor laser using the semiconductor substrate which promises smooth and optically excellent cleaved surfaces and is suitable for fabricating semiconductor lasers using nitride III-V compound semiconductors. Using a semiconductor substrate, such as GaN substrate, having a major surface substantially normal to a 0001-oriented face, e.g. 01-10-oriented face or 11-20-oriented face, or offset within 5 from these faces, nitride III-V compound semiconductor layers are epitaxially grown on the substrate to form a laser structure. To make cavity edges, the GaN substrate is cleaved together with the overlying III-V compound semiconductor layers along high-cleavable 0001-oriented faces.