首页>
外国专利>
Pre-metal dielectric rapid thermal processing for sub-micron technology
Pre-metal dielectric rapid thermal processing for sub-micron technology
展开▼
机译:用于亚微米技术的金属前电介质快速热处理
展开▼
页面导航
摘要
著录项
相似文献
摘要
A process for forming silicate glass layers on substrates is disclosed. A silicate glass layer is first deposited onto a substrate, such as a semiconductor wafer. The wafer is then placed in a thermal processing chamber and heated in the presence of a reactive gas. The object is heated to a temperature sufficient for reflow of the silicate glass. In one embodiment, the atmosphere contained within the processing chamber comprises steam in combination with a reactive gas. The reactive gas can be, for instance, hydrogen, oxygen, nitrogen, dinitrogen oxide, ozone, hydrogen peroxide, atomic and/or molecular hydrogen, or radicals or mixtures thereof.
展开▼