High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processing

摘要

Highly reliable thin oxynitride layers of very good Si-SiO2 interface endurance were grown on silicon wafers with a split N 2O cycle (N2O/O2/N2O) employing rapid thermal processing (RTP). Excellent electrical characteristics with reduced positive charge generation, electron trapping and/or interface state generation were achieved under high field stressing compared to pure N2O dielectric.