OPTIMIZED REACHTHROUGH IMPLANT FOR SIMULTANEOUSLY FORMING AN MOS CAPACITOR

摘要

The method of diffusion region is formed on a silicon substrate with low-resistance, acceptable defect concentration, reliability and technology controlling and process, comprising steps of (one) is to silicon base and the first ion implanting step, the first ion implanting step carries out under the conditions of being, to be formed in the silicon substrate in amorphized silicon; (2) to the decrystallized Si of the silicon substrate containing the region to the second ion implanting step, the second ion implanting step is the Doped ions by peak value implantation material under conditions of implantation Doped ions to the silicon substrate in the decrystallized Si in region; (3) make the decrystallized Si recrystallizations in the region of the silicon substrate to form diffusion region under conditions of annealing, be provided in the silicon substrate.