An MRAM device (100) and method of manufacturing thereof having magnetic memory storage cells or stacks (MS0, MS1, MS2, MS3) coupled together in series. Devices (X0, X1, X2, and X3) are coupled in parallel to each magnetic memory storage cell (MS0, MS1, MS2, MS3). The active are (AA) is continuous, and contact vias (VU1, VL1, VU2, VL2 and VU3) are shared by magnetic stacks (MS0, MS1, MS2, MS3). N+ regions (108, 110, 112, 114, 116, 118) are coupled together by devices (X0, X1, X2, and X3).
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机译：具有串联耦合在一起的磁存储器存储单元或堆栈（MS0，MS1，MS2，MS3）的MRAM设备（100）及其制造方法。装置（X0，X1，X2和X3）与每个磁存储器存储单元（MS0，MS1，MS2，MS3）并联耦合。有源区（AA）是连续的，接触通孔（VU1，VL1，VU2，VL2和VU3）由磁性堆栈（MS0，MS1，MS2，MS3）共享。 N +个区域（108、110、112、114、116、118）通过设备（X0，X1，X2和X3）耦合在一起。
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