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A METHOD TO REDUCE LEAKAGE DURING A SEMI-CONDUCTOR BURN-IN PROCEDURE
A METHOD TO REDUCE LEAKAGE DURING A SEMI-CONDUCTOR BURN-IN PROCEDURE
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机译:减少半导体烧入过程中泄漏的方法
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摘要
A method for reducing sub-threshold leakage during the burn-in procedure for a semi-conductor is disclosed. The method includes applying a back-bias voltage to the device during the burn-in procedure. The back-bias voltage increases the threshold voltage of the semi-conductor device and consequently, reduces the sub-threshold leakage current.
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