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METHOD AND APPARATUS FOR NITRIDE SPACER ETCH PROCESS IMPLEMENTING IN SITU INTERFEROMETRY ENDPOINT DETECTION AND NON-INTERFEROMETRY ENDPOINT MONITORING
METHOD AND APPARATUS FOR NITRIDE SPACER ETCH PROCESS IMPLEMENTING IN SITU INTERFEROMETRY ENDPOINT DETECTION AND NON-INTERFEROMETRY ENDPOINT MONITORING
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机译:原位干涉终点检测和非干涉终点监测的氮化物间隙刻蚀过程实现方法和装置
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摘要
A method for fabricating a spacer of a gate structure is provided. The method performing a first etch process implementing a first etchant gas. The first etch process is configured to implement an interferometry endpoint (IEP) detection method to detect a removal of a portion of a spacer layer having a specific thickness from over the surface of the substrate, thus leaving a thin spacer layer. The method further includes performing a second etch process for a predetermined period of time implementing a second etchant gas. The second etch process is configured to remove the thin spacer layer, leaving the spacer for the gate structure.
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