A wave aberration of a projection optical system is measured and information on the wave aberration is acquired (step 102). Moreover, a reticle pattern is transferred onto a wafer via the projection optical system (steps 104 to 108). Next, the wafer having the transferred pattern is developed, a line width of a resist image formed on the wafer is measured, and an image line width difference between the first line pattern extending in a predetermined direction and the second line pattern orthogonally intersecting the first line pattern is measured (steps 112 to 118). The projection optical system is adjusted so that the size of the ninth term (lower degree spherical aberration) is controlled according to the value of the twelfth term (higher degree astigmatism) of the Zernique multinominal in which the wave aberration is expanded and the aforementioned line width difference (steps 120 to 124).
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