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VCSEL WITH ANTIGUIDE CURRENT CONFINEMENT LAYER

机译:带有电流限制层的VCSEL

摘要

A surface-emitting laser, such as a VCSEL (100), for generating single-transverse mode laser light at a lasing wavelength, has a first mirror (121) and a second mirror (148) positioned so as to define a laser cavity therebetween, and a semiconductor active region (141) disposed between the first and second mirrors (121, 148) for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength. An annular antiguide structure (150) is disposed within the laser cavity and between the active region (141) and one of the first and second mirrors (141, 148), the annular antiguide structure (150) comprising an antiguide material (n2) and having a central opening, the central opening comprising a second material (n1) having an index of refraction for light at the lasing wavelength smaller than that of the antiguide material, whereby the annular antiguide structure (150) causes preferential antiguiding of higher order transverse lasing modes in the laser cavity.
机译:用于产生激光波长的单横向模式激光的表面发射激光器,例如VCSEL(100),具有第一反射镜(121)和第二反射镜(148),以便在两者之间限定激光腔。半导体有源区(141)和设置在第一和第二反射镜(121、148)之间的半导体有源区(141)用于通过受激发射来放大激光腔中的激光波长的光。环形抗导结构(150)设置在激光腔内并且在有源区域(141)与第一和第二反射镜(141、148)之一之间,环形抗导结构(150)包括抗导材料(n2)和具有中心开口的中心开口包括第二材料(n1),该第二材料对激光波长的光的折射率小于抗导材料的折射率,由此环形抗导结构(150)引起较高阶横向激光的优先抗导激光腔中的模式。

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