首页> 外国专利> MGB sb 2 /sb SINGLE CRYSTAL AND ITS PRODUCTION METHOD, AND SUPERCONDUCTIVE MATERIAL CONTAINING MGB sb 2 /sb SINGLE CRYSTAL

MGB sb 2 /sb SINGLE CRYSTAL AND ITS PRODUCTION METHOD, AND SUPERCONDUCTIVE MATERIAL CONTAINING MGB sb 2 /sb SINGLE CRYSTAL

机译:MGB sb 2 / sb单晶及其生产方法,以及包含MGB sb 2 / sb单晶的超导材料

摘要

The invention is intended to establish means for manufacturing MB2 single crystals and to provide a useful superconductive material (wire rod and so forth) taking advantage of anisotropic superconductive properties thereof. A mixed raw material of Mg and B or a precursor containing MgB2 crystallites, obtained by causing reaction of the mixed raw material of Mg and B, kept in contact with hexagonal boron nitride (hBN), is held at a high temperature in the range of 1300 to 1700°C and under a high pressure in the range of 3 to 6 GPa to cause reaction for forming an intermediate product, thereby growing the MB2 single crystals having anisotropic superconductive properties via the intermediate product. The single crystals have features such that, depending on a direction in which a magnetic field is applied thereto, an irreversible magnetic field strength becomes equivalent to not less than 95% of a second magnetic field strength, so that adjustment of crystal orientation thereof results in production of a superconductive material excellent in property. Further, it is useful in effecting growth of the single crystals to cause a reducing agent such as Mg and so forth to coexist at the time of the reaction, or to provide a temperature gradient in melt occurring in the course of the reaction.
机译:本发明旨在建立用于制造MB2单晶的装置,并提供一种利用其各向异性超导特性的有用的超导材料(线材等)。通过使保持与六方氮化硼(hBN)接触的Mg和B的混合原料的反应而获得的Mg和B的混合原料或包含MgB 2的微晶的前体,被保持在范围内的高温下。在1300至1700℃和3至6GPa的高压下引起反应以形成中间产物,从而经由该中间产物生长具有各向异性超导性质的MB2单晶。单晶具有这样的特征,即,根据对其施加磁场的方向,不可逆磁场强度等于或大于第二磁场强度的95%,从而导致其晶体取向的调整导致:生产性能优异的超导材料。此外,在使单晶生长以使还原剂如Mg等在反应时共存或在反应过程中提供熔融温度梯度方面有用。

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