首页> 外国专利> SILICON CONTROLLED RECTIFIER ELECTROSTATIC DISCHARGE PROTECTION DEVICE WITH EXTERNAL ON-CHIP TRIGGERING AND COMPACT INTERNAL DIMENSIONS FOR FAST TRIGGERING

SILICON CONTROLLED RECTIFIER ELECTROSTATIC DISCHARGE PROTECTION DEVICE WITH EXTERNAL ON-CHIP TRIGGERING AND COMPACT INTERNAL DIMENSIONS FOR FAST TRIGGERING

机译:带有外部片上触发和紧凑内部尺寸的硅控制整流器静电放电保护装置,可快速触发

摘要

A silicon controlled rectifier electrostatic discharge protection circuit with external on-chip triggering and compact internal dimensions for fast triggering. The ESD protection circuit includes a silicon controlled rectifier (SCR) (202) having an anode (122) coupled to the protected circuitry and a cathode (124) coupled to ground, where the cathode has at least one high-doped region (312m). At least one trigger-tap (401) is disposed proximate to the at least one high-doped region and an external on-chip triggering device (205) is coupled to the trigger-tap and the protected circuitry.
机译:可控硅静电放电保护电路,具有外部片上触发功能和紧凑的内部尺寸,可实现快速触发。 ESD保护电路包括可控硅整流器(SCR)(202),其具有耦合至受保护电路的阳极(122)和耦合至接地的阴极(124),其中阴极具有至少一个高掺杂区(312m)。 。至少一个触发抽头(401)靠近至少一个高掺杂区域设置,并且外部片上触发装置(205)耦合到触发抽头和受保护电路。

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