- SEMICONDUCTOR DEVICES HAVING GROUP - COMPOUND LAYERS

摘要

PURPOSE: A semiconductor devices having group III-V compound layers is provided to reduce on-stage voltage drop. CONSTITUTION: A power semiconductor device comprises a substrate of first conductivity having a dopant concentration of the first level, the substrate being a group III-V compound material, a transitional layer(54) of first conductivity epitaxially grown over the substrate, the transitional layer having a dopant concentration of the second level and being a group III-V compound material, and an epitaxial layer of first conductivity grown over the transitional layer and having a dopant concentration of the third level, wherein electrical currents flow through the transitional and epitaxial layers when the device is operating.