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APPARATUS AND METHOD FOR THE SYNTHESIS OF THE DIAMOND WITH POWDER SHAPE BY CHEMICAL VAPOR DEPOSITION CVD METHOD

机译:化学气相沉积CVD法合成粉末状金刚石的装置和方法

摘要

PURPOSE: A process for synthesizing diamond powder having several micrometers or less of small particle size and spherical particle shape by chemical vapor deposition method is provided, and an apparatus which is capable of synthesizing diamond powder in large quantities by modifying structure of a synthesizing apparatus is provided. CONSTITUTION: In a CVD (chemical vapor deposition) diamond synthesizing apparatus for synthesizing a film shaped diamond on the substrate I by forming plasma in a vacuum container(1) thereby decomposing a carbon source reaction gas, the apparatus for synthesizing spherical diamond powder(7) comprises a substrate I(3) which is directly contacted with plasma(2), and a substrate II(8) which is mounted on the circumference of the substrate I so that the substrate II is not directly contacted with plasma, wherein the apparatus for synthesizing spherical diamond powder(7) comprises a substrate I which is fabricated in a ring shape, and a substrate II which is mounted on inner and outer parts of the ring shaped substrate I so that the substrate II is not contacted with plasma, the apparatus for synthesizing spherical diamond powder comprises two or more substrates I for separating plasma into two or more, and a substrate II which is mounted on the circumference of the substrates I so that the substrate II is not contacted with plasma, and wherein the substrate II is installed within 10 cm from plasma with the substrate II not being contacted with plasma.
机译:用途:提供一种通过化学气相沉积法合成粒径小且粒径为几微米以下的球形球形金刚石粉的方法,并且一种能够通过改变合成设备的结构来大量合成金刚石粉的设备为:提供。组成:在用于通过在真空容器中形成等离子体从而分解碳源反应气体的,在基板I上合成膜状金刚石的CVD(化学气相沉积)金刚石合成设备中,该用于合成球形金刚石粉末的设备(7) )包括直接与等离子体(2)接触的基板I(3)和安装在基板I的圆周上以使基板II不直接与等离子体接触的基板II(8),其中该装置用于合成球形金刚石粉末(7)的装置包括:基体I,其被制造成环形;以及基体II,其被安装在环形基体I的内部和外部,从而使基体II不与等离子体接触,合成球形金刚石粉末的装置包括两个或更多个将等离子体分离成两个或更多个的基体I,以及安装在基体I的圆周上的基体II,以衬底II不与等离子体接触,并且其中衬底II安装在距等离子体10cm以内的位置,并且衬底II不与等离子体接触。

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