HALO-FREE NON-RECTIFYING CONTACT ON CHIP WITH HALO SOURCE/DRAIN DIFFUSION

摘要

The semiconductor chip includes a semiconductor substrate having a non-rectifying contact diffusion portion and the rectifying contact diffusion portion. Halo diffusion portion adjacent said rectifying contact diffusion section but not adjacent, the said non-rectifying contact diffusion section. It said rectifying contact diffusion portion may be added to the source / drain diffusion of the FET, thereby improving the resistance to punch-through phenomenon. Non-rectifying contact diffusion portion may be a body contact, the contact, the contact resistance or a capacitor of a lateral diode of the FET. Hayeoseo adjacent to the non-rectifying contact reduces the series resistance by preventing the halo portion generated diffusion, thereby improving the device characteristics. In another embodiment, in the chip with the device having a halo adjacent to the diffusions, hayeoseoneun near the rectifying contact diffusion portion of the lateral diode is not present any halo diffusion bankruptcy, or more of the lateral diode factor (ideality factor ) to significantly increase the breakdown voltage increases.