HETEROGENEOUS JUNCTION STRUCTURE COMPOSED OF FERROELECTRIC AND GALLIUM NITRIDE SEMICONDUCTOR LAYER, FABRICATING METHOD THEREOF AND FIELD EFFECT TRANSISTOR USING THE SAME

摘要

PURPOSE: A method for fabricating a heterogeneous junction structure composed of ferroelectric and a gallium nitride semiconductor layer is provided to form a stable heterogeneous junction structure having a ferroelectric Bi-La-Ti(BLT) thin film of a layered structure type on a GaN substrate capable of adapting to a next-generation electro-optic device and an electronic device by using large polarization caused by ferroelectricity and a high dielectric constant of a ferroelectric gate. CONSTITUTION: A GaN thin film(100) is deposited on a sapphire substrate. The GaN thin film is separated from the sapphire substrate. The separated GaN thin film is bonded to the upper surface of either one of a silicon substrate or a GaAs substrate. A BLT oxide-based ferroelectric thin film of a layered structure type is formed on the GaN thin film through one of a pulsed laser deposition(PLD) method or a sol-gel method.