首页> 外国专利> APPARATUS FOR WET-ETCHING OF ANISOTROPIC SILICON WAFER

APPARATUS FOR WET-ETCHING OF ANISOTROPIC SILICON WAFER

机译:各向异性硅晶片的湿法蚀刻装置

摘要

PURPOSE: A wet etching apparatus of an anisotropic silicone wafer is provided to be capable of uniformly conserving etching temperature and rate by improving the structure of wet etching apparatus. CONSTITUTION: A cylindrical beaker(110) is provided with a space portion(111) formed in the sidewall of the beaker and an etchant exhaust(112) formed at the lower portion of the beaker, wherein the space portion is filled with silicone oil. A beaker lead(120) is connected with the upper portion of the beaker, wherein the beaker lead is provided with an etchant injection port(121), a condenser(122), and a temperature probe(123). A hot plate(130) is installed on the rear surface of the beaker for supplying heat to the beaker. The hot plate is supported by a main frame(140). At this time, the main frame includes a circuit part electrically connected with the temperature probe, so that the circuit part is capable of controlling the hot plate according to the etchant temperature of the beaker. A nitrogen gas supply pipe(150) having a plurality of gas supply holes(151) is attached to the upper portion of the hot plate for supplying nitrogen gas into the beaker. An O-ring(124) is located between the beaker and the beaker lead for sealing up the beaker.
机译:目的:提供一种各向异性硅晶片的湿蚀刻设备,其能够通过改进湿蚀刻设备的结构来均匀地保持蚀刻温度和速率。组成:圆柱形烧杯(110),在烧杯的侧壁上形成有空间部分(111),在烧杯下部形成有蚀刻剂排气(112),其中该空间部分充满硅油。烧杯引线(120)与烧杯的上部连接,其中该烧杯引线设有蚀刻剂注入口(121),冷凝器(122)和温度探针(123)。热板(130)安装在烧杯的后表面上,用于向烧杯提供热量。热板由主框架(140)支撑。此时,主框架包括与温度探针电连接的电路部分,从而该电路部分能够根据烧杯的蚀刻剂温度来控制热板。具有多个气体供应孔(151)的氮气供应管(150)连接到加热板的上部,用于将氮气供应到烧杯中。 O型圈(124)位于烧杯和烧杯引线之间,用于密封烧杯。

著录项

  • 公开/公告号KR20030045476A

    专利类型

  • 公开/公告日2003-06-11

    原文格式PDF

  • 申请/专利权人 LG INNOTEC CO. LTD.;

    申请/专利号KR20010076202

  • 发明设计人 HWANG HYO YEON;

    申请日2001-12-04

  • 分类号H01L21/3063;

  • 国家 KR

  • 入库时间 2022-08-21 23:47:00

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