Method for forming dual damascene pattern and method for fabricating multi-metal interconnect by using the same

摘要

PURPOSE: A method for forming a dual damascene pattern and a method for manufacturing a multilayer metal line using the same are provided to be capable of preventing the deterioration of device characteristics due to a plurality of etching processes by simultaneously forming a line and a via hole when carrying out the following trench process without an additional via etching process. CONSTITUTION: After forming the first etch stop layer(33) on the first interlayer dielectric(32) by carrying out an ion implantation, a hole mask is formed on the first etch stop layer. After implanting doped dopants into the exposed portion of the first etch stop layer through the hole mask, the hole mask is then removed. The second interlayer dielectric(36) and the second etch stop layer(37) are sequentially formed on the resultant structure. After forming a line mask(38) on the resultant structure, a line pattern and a hole pattern are simultaneously formed by carrying out a single etching process at the resultant structure using the line mask as an etching mask.