Αl ALLOY THIN FILM FOR SEMICONDUCTOR DEVICE ELECTRODE AND SPUTTERING TARGET FOR FORMING Αl ALLOY THIN FILM FOR SEMICONDUCTOR DEVICE ELECTRODE

摘要

The present invention provides an Al alloy thin film for a semiconductor device electrode having an electrical resistivity of as low as 6 muOMEGAcm or less, high hillock resistance, high void resistance, and high corrosion resistance against an alkaline solution, which are required for an electrode thin film of large-screen liquid crystal display (LCD) or high-resolution LCD. The present invention also provides a sputtering target to deposit the Al alloy film by sputtering process for a semiconductor device electrode. The Al alloy thin film for a semiconductor device electrode satisfies the conditions of Y=0.3 at %, IVa group metal element=0.2 at %, and 0.3Cy+3CIVa=2 (wherein Cy: Y content (at %), CIVa: content of IVa group metal element (at %)), and the sputtering target is made of an Al alloy satisfying the above conditions.