Magnetic random access memory with circuits for write and read using magnetic tunnel junction (MTJ) devices

摘要

A magnetic random access memory with write and read circuits using magnetic tunnel junction (MTJ) devices wherein MTJs are arranged at cross points of word lines and read bit lines to form memory cells. After write bit lines and read bit lines are arranged parallel to each other, current bypass paths are formed allowing current to bypass the side and bottom of the MTJ. Thus, an electric field having intensity enough to change the magnetization direction of the MTJ, is applied only to each selected cell. In a write operation, the magnetization direction of a free layer in the MTJ is formed to be parallel or antiparallel to the magnetization direction of a pinned ferromagnetic layer by the current passing through the word line and the current bypass path.