首页> 外国专利> FOREIGN EXCHANGE OFFICE CIRCUIT FOR INTERNET TELEPHONY GATEWAY SYSTEM

FOREIGN EXCHANGE OFFICE CIRCUIT FOR INTERNET TELEPHONY GATEWAY SYSTEM

机译:互联网电话网关系统的外国交换局电路

摘要

PURPOSE: An FXO(Foreign eXchange Office) circuit in an ITGS(Internet Telephony Gateway System) is provided to implement an FXO interface circuit in accordance with the loop status voltage-current characteristics of TBR21(Technical Basis for Regulation 21), an European PSTN-associated technical regulation. CONSTITUTION: An FXO circuit in an ITGS comprises an electronic inductor circuit part. The electronic inductor circuit part is composed of resistors(R1-R3), a Darlington transistor(Q1), a transistor(Q2), a capacitor(C1), a feedback diode(D2), and a constant voltage zener diode(D1). The resistors(R1,R2) divide the voltage supplied between a tip and a ring and supply bias voltage to the Darlington transistor(Q1). The Darlington transistor(Q1), driven by the bias voltage, generates transistor driving current for current limitation. The transistor(Q2), connected between the base and emitter of the Darlington transistor(Q1), generates low impedance between the tip and the ring. The feedback diode(D2) and the resistor(R3), connected to the base and emitter of the transistor(Q2) respectively, are provided for current limitation. The capacitor(C1) interrupts noise components from the signals inputted to the transistors(Q1,Q2). The feedback diode(D2). The constant voltage zener diode(D1) protects the Darlington transistor(Q1) against an instant transient voltage generated when the tip-ring state is changed into an off-hook state.
机译:目的:提供ITGS(互联网电话网关系统)中的FXO(外国交换局)电路,以根据欧洲PSTN的TBR21(法规21的技术基础)的环路状态电压-电流特性实现FXO接口电路。 -相关的技术法规。组成:ITGS中的FXO电路包括一个电子电感器电路部分。电子电感器电路部分由电阻器(R1-R3),达林顿晶体管(Q1),晶体管(Q2),电容器(C1),反馈二极管(D2)和恒压齐纳二极管(D1)组成。电阻(R1,R2)分压在尖端和环形之间提供的电压,并将偏置电压提供给Darlington晶体管(Q1)。由偏置电压驱动的达林顿晶体管(Q1)产生晶体管驱动电流以限制电流。连接在达林顿晶体管(Q1)的基极和发射极之间的晶体管(Q2)在尖端和环之间产生低阻抗。提供反馈二极管(D2)和电阻器(R3),分别连接到晶体管(Q2)的基极和发射极,以限制电流。电容器(C1)中断输入到晶体管(Q1,Q2)的信号中的噪声成分。反馈二极管(D2)。恒压齐纳二极管(D1)可保护Darlington晶体管(Q1)免受瞬态电压的冲击,瞬态电压是在尖环状态变为摘机状态时产生的。

著录项

  • 公开/公告号KR100371182B1

    专利类型

  • 公开/公告日2003-02-06

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20000071292

  • 发明设计人 김대성;한성용;

    申请日2000-11-28

  • 分类号H04Q1/28;

  • 国家 KR

  • 入库时间 2022-08-21 23:45:44

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号